Next year's flagships may use Samsung's new 512GB internal flash storage

Next year's flagships may use Samsung's new 512GB internal flash storage

Next year's flagships may use Samsung's new 512GB internal flash storage

Obviously, these chips are being used in more than just mobile phones, since SSDs and high-performance removable memory cards also take advantage of their performance and reliability. Since then, we've seen multiple smartphone OEMs adopt UFS. It is going to change soon, you will be seeing 512GB storage on the smartphones, especially, the Samsung flagships. It has built 64-layer 512 gigabit chips. To account for the growing storage needs in mobile, Samsung has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next generation smartphones and tablets. Samsung is now manufacturing 512GB internal storage chips for smartphones, and your next flagship purchase could feature one of these babies.

"By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world".

Coming to the intricate details of the announcement, this 512GB of eUFS storage comprises up of eight 64-layer 512Gb V-NAND chips and a controller chip, all stacked together.

The new solution is also really fast, allowing users to "store approximately 130 [10 minute] 4K Ultra HD video clips", a feat that might make the experience very sluggish on current storage solutions. Compared to a 64GB chip that could only hold 13 of these videos, that's a massive increase.

Samsung says that it has introduced a new set of proprietary technologies to maximize performance and energy efficiency.

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Samsung is promising speeds of 860MB/s while reading and 255 MB/s while writing the data. That translates to being able to transfer a 5GB Full HD video clip to an SSD in about six seconds, which is about eight times faster than a typical microSD card.

For random operations, the new eUFS can read 42,000 IOPS and write 40,000 IOPS. This will improve the speed of storage-intensive tasks such as high-resolution burst photos, file searches, and downloading videos in dual app mode, the company states.

According to the official press release, "Samsung intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production".

Would you still be interested in picking up the Galaxy S9 if it shipped with 500GB of internal flash storage instead of a microSD slot?

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